
Dr. Vivek Pratap Singh
Assistant Professor
Google Scholar: https://scholar.google.com/citations?user=vaicf6AAAAAJ&hl=en
Scopus: https://www.scopus.com/authid/detail.uri?authorId=57225865828
ORCID: https://orcid.org/0000-0001-7206-6023
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U.G |
ECE 211 - Electronics Circuits and Devices |
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ECE 351 - VLSI Technology |
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P.G |
VED 103 - Embedded Systems |
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VED 201 - VLSI Technology |
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Organization |
Start Date |
End Date |
Designation |
Nature of Work |
| Department of Electrical Engineering, IIT Kanpur, India | 04-09-2024 | 11-03-2025 | Postdoctoral Research Fellow | Research |
| Department of Advanced Battery Convergence Engineering at Dongguk University, Seoul, Republic of Korea | 11-03-2025 | 31-05-2026 | Assistant Professor | Teaching and Research |
| Maulana Azad National Institute of Technology Bhopal | 01-06-2026 | Till date | Assistant Professor | Teaching and Research |
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Authors |
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Journal |
VOL. NO., PAGE NO |
YEAR |
SCI/ Scopus |
IMPACT FACTOR |
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V. P. Singh, C. P. Singh, H. Ranjan, and S. K. Pandey |
Investigation of Analog Resistive Switching in Solution-Processed Lead-Free Perovskite Cs2SnI6 Memristor for Synaptic Application |
IEEE Transactions on Electron Devices |
Vol. 70, p.-5092-5098 |
2023 |
SCI |
3.2 |
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V. P. Singh, C. P. Singh, H. Ranjan, and S. K. Pandey |
Experimental Investigation and Performance Analysis of V2O5-Based Memristive Devices for Brain-Inspired Computing |
IEEE Transactions on Electron Devices |
Vol. 71, p.- 5744-5753 |
2024 |
SCI |
3.2 |
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V. P. Singh, C. P. Singh, H. Ranjan, and S. K. Pandey |
Experimental demonstration and analysis of crossbar array memristor for brain-inspired computing |
Applied Materials Today |
Vol. 36, p.- 102045
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2024 |
SCI |
6.9 |
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V. P. Singh, C. P. Singh, H. Ranjan, and S. K. Pandey |
Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application |
Materials Letters |
Vol. 344, p.- 134431
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2023 |
SCI |
2.7 |
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V. P. Singh, C. P. Singh, H. Ranjan, G. Kumar, J. Jaiswal, and S. K. Pandey |
Fabrication perspective of Fe3O4-based cross-cell memristive device for synaptic applications |
Current Applied Physics |
Vol. 63, p.- 48-55 |
2024 |
SCI |
3.1 |
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V.P. Singh, C.P. Singh, S. Kumar, S. K. Pandey, D. Punetha |
Microwave-assisted synthesis and characterization of iron oxide nanoparticles for advanced biomedical sensing applications |
IEEE Open Journal of Nanotechnology |
Vol. 6, p.- 2025
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2024 |
SCI |
1.9 |
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V. P. Singh, C. P. Singh, G. Sundaram, H. Lee, N. Lim, J. Kong, S. Kwon, J. Jeon, V. P. Singh |
Tunable Synaptic Plasticity in Bilayer V2O5/SiO2 ReRAM Crossbar Array for Brain Inspired Computing |
Ceramics International |
……..
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2026 |
SCI |
5.6 |
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C. P. Singh, V. P. Singh, H. Ranjan, and S. K. Pandey |
Performance Analysis and Read Voltage Optimization of E-Beam Evaporated Amorphous SnO2-Based Cross-Cell Resistive Switching Device |
IEEE Transactions on Electron Devices |
Vol. 70, p.- 6637-6643
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SCI |
3.2 |
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C. P. Singh, V. P. Singh, H. Ranjan, and S. K. Pandey |
Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application |
Materials Letters |
Vol. 352, p.- 135156 |
2023
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SCI |
2.7 |
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C. P. Singh, V. P. Singh, H. Ranjan, and S. K. Pandey |
Bipolar and rectifying resistive switching dynamics in E-beam evaporated SnOx based memristor |
Ceramics International |
Vol. 50, p.- 4092-4100 |
2024 |
SCI |
5.6 |
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M. R. Mantri, D. P. Panda, D. Punetha, S. K. Pandey, V. P. Singh, S. K. Pandey, and S. Chakrabarti |
Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer |
IEEE Sensors Journal |
Vol. 23, p.- 15369-15375 |
2023 |
SCI |
4.5 |
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N. Jaiswal, V. P. Singh, C. P. Singh, D. Punetha, and S. K. Pandey |
Development of Solution-Processed Eco-Friendly Cs2SnI6 Double Perovskite Thin-Film Solar Cell |
IEEE Journal of Photovoltaics |
Vol. 14, p.- 265-271 |
2023 |
SCI |
2.6 |
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N. Jaiswal, V. P. Singh, and S. K. Pandey. |
Performance Analysis of Triple‐Cation Mixed‐Halide Bifacial Perovskite Solar Cell with 17% Rear and 25% Front Efficiency |
Energy Technology |
Vol. 12, p.- 2300639 |
2024 |
SCI |
3.6 |
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G. Kumar, V. P. Singh, and S. K. Pandey |
Assessing Gas Leakage Detection Performance Using Machine Learning with Different Modalities |
Transactions on Electrical and Electronic Materials |
Vol. 25, p.- 653-664 |
2024 |
SCI |
1.8 |
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R. R. Karmakar, H. Ranjan, V. P. Singh, S. Singh, S. K. Pandey, J. Jaiswal, and S. Kumar |
Resistive switching dynamics in MoSe2-ZnO nanoheterostructures for energy-efficient neuromorphic application |
Sensors and Actuators A: Physical |
Vol. 393, p.- 1 16835 |
2025 |
SCI |
4.9 |
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H. Ranjan, C. P. Singh, V. P. Singh, and S. K. Pandey |
Efficient and Robust Resistive Switching Behaviour of MoS2 Based Memristor |
IEEE Transactions on Materials for Electron Devices |
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2025 |
SCI |
….. |
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H. Ranjan, C. P. Singh, V. P. Singh, and S. K. Pandey |
Self-rectifying and forming-free resistive switching with Cu/BN/SiO2/pt bilayer device |
Materials Science in Semiconductor Processing |
Vol. 83, p.- 108744 |
2024 |
SCI |
4.6 |
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H. Ranjan, C. P. Singh, V. P. Singh, P. Pal, and S. K. Pandey |
Highly Efficient ZnO/hBN: PVA-Based Multibit Memristor Array for Edge Computing |
IEEE Transactions on Electron Devices |
Vol. --- p.- 1-7 |
2026 |
SCI |
3.2 |
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H. Ranjan, P. Pal, V. P. Singh, G. Kumar, S. Kumar, and S. K. Pandey |
MoS2:PVA-based Flexible Optoelectronic Reconfigurable Memristor for Neuromorphic Computing |
IEEE Electron Device Letters (EDL) |
…………. |
2026 |
SCI |
4.5 |
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N. Ranjan, C. P. Singh, H. Ranjan, V. P. Singh, and S. K. Pandey |
A novel linear memristor model for data storage and synaptic applications |
Journal of Computational Electronics |
Vol. 24, p.- 193 |
2025 |
SCI |
2.5 |
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International Conference |
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Publications at a Glance |
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Total Publications: 25 |
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